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Results 1 to 25 of 530

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The effect of Ga on internal friction of pure Al before and after deformationSHI, Y; CAI, B; KONG, Q. P et al.Journal of materials science. 2003, Vol 38, Num 9, pp 1895-1899, issn 0022-2461, 5 p.Article

Gallium-induced magnesium enrichment on grain boundary and the gallium effect on degradation of tensile properties of aluminum alloysUAN, Jun-Yen; CHANG, Cheng-Chia.Metallurgical and materials transactions. A, Physical metallurgy and materials science. 2006, Vol 37, Num 7, pp 2133-2145, issn 1073-5623, 13 p.Article

Bridging grain boundary volume to segregation at symmetric grain boundariesMOON, Jaehyun; RICHTER, Gunther; SIGLE, Wilfried et al.Materials science & engineering. A, Structural materials : properties, microstructure and processing. 2007, Vol 448, Num 1-2, pp 299-302, issn 0921-5093, 4 p.Article

Physical modeling of the effect of shearing on the concentration profile in a shear cellMATTHIESEN, D. H; DAVIDSON, K; ARNOLD, W. A et al.Journal of the Electrochemical Society. 1999, Vol 146, Num 8, pp 3087-3091, issn 0013-4651Article

Highly conductive and transparent Ga-doped epitaxial ZnO films on sapphire by CVDATAEV, B. M; BAGAMADOVA, A. M; DJABRAILOV, A. M et al.Thin solid films. 1995, Vol 260, Num 1, pp 19-20, issn 0040-6090Article

Acceleration of grain boundary motion in Al by small additions of GaMOLODOV, D. A; CZUBAYKO, U; GOTTSTEIN, G et al.Philosophical magazine letters. 1995, Vol 72, Num 6, pp 361-368, issn 0950-0839Article

Study of the Structural Role of Gallium and Aluminum in 45S5 Bioactive Glasses by Molecular Dynamics SimulationsMALAVASI, Gianluca; PEDONE, Alfonso; CRISTINA MENZIANI, Maria et al.The Journal of physical chemistry. B. 2013, Vol 117, Num 15, pp 4142-4150, issn 1520-6106, 9 p.Article

Effective suppression of interfacial intermetallic compound growth between Sn-58 wt.% Bi solders and Cu substrates by minor Ga additionLIN, Shih-Kang; TRONG LAN NGUYEN; WU, Shu-Chang et al.Journal of alloys and compounds. 2014, Vol 586, pp 319-327, issn 0925-8388, 9 p.Article

Enhanced photocatalytic decolorization of methyl orange by gallium-doped α-Fe2O3ZHENGHUA XIAO; JIANZHANG LI; JUNBO ZHONG et al.Materials science in semiconductor processing. 2014, Vol 24, pp 104-109, issn 1369-8001, 6 p.Article

Enhanced Performance of GaN-Based Green Light-Emitting Diodes with Gallium-Doped ZnO Transparent Conducting OxideOH, Min-Suk; INSEOK SEO.Journal of electronic materials. 2014, Vol 43, Num 4, pp 1232-1236, issn 0361-5235, 5 p.Article

Improved ohmic contact of Ga-Doped ZnO to p-GaN by using copper sulfide intermediate layersWEN GU; TAO XU; JIANHUA ZHANG et al.Solid-state electronics. 2013, Vol 89, pp 76-80, issn 0038-1101, 5 p.Article

Rational growth of semi-polar ZnO texture on a glass substrate for optoelectronic applicationsLU, B; MA, M. J; YE, Y. H et al.Journal of physics. D, Applied physics (Print). 2013, Vol 46, Num 5, issn 0022-3727, 055105.1-055105.7Article

Investigation of dual ion beam sputtered transparent conductive Ga-doped ZnO filmsSAURABH KUMAR PANDEY; SUSHIL KUMAR PANDEY; VERMA, Shruti et al.Journal of materials science. Materials in electronics. 2013, Vol 24, Num 12, pp 4919-4924, issn 0957-4522, 6 p.Article

Hydrodesulfurization of sulfur refractory compounds: Effect of gallium as an additive in NiWS/γ-Al2O3 catalystsDIAZ DE LEON, J. N; PICQUART, M; MASSIN, L et al.Journal of molecular catalysis. A, Chemical. 2012, Vol 363-364, pp 311-321, issn 1381-1169, 11 p.Article

Influence of gallium on the properties of Pt―Re/Al2O3 naphtha reforming catalystsVICERICH, María A; ESPECEL, Catherine; BENITEZ, Viviana M et al.Applied catalysis. A, General (Print). 2011, Vol 407, Num 1-2, pp 49-55, issn 0926-860X, 7 p.Article

High quality ZnO and Ga:ZnO thin films grown onto crystalline Si (1 0 0) by RF magnetron sputteringGABAS, M; DIAZ-CARRASCO, P; AGULLO-RUEDA, F et al.Solar energy materials and solar cells. 2011, Vol 95, Num 8, pp 2327-2334, issn 0927-0248, 8 p.Conference Paper

EPR analysis of the local structure of Ni3+ ions in Ni-based electrode materials obtained under high-pressureZHECHEVA, Ekaterina; STOYANOVA, Radostina; SHINOVA, Elitza et al.Journal of materials science. 2007, Vol 42, Num 10, pp 3343-3348, issn 0022-2461, 6 p.Conference Paper

The effect of Ga content on the wetting reaction and interfacial morphology formed between Sn-8.55Zn-0.5Ag 0.1A1 xGa solders and CuLIU, Nai-Shuo; LIN, Kwang-Lung.Scripta materialia. 2006, Vol 54, Num 2, pp 219-224, issn 1359-6462, 6 p.Article

Donor and acceptor doping of zinc oxide varistorsGILBERT, Ian; FREER, Robert.Journal of physics. Condensed matter (Print). 2002, Vol 14, Num 4, pp 945-954, issn 0953-8984Article

Enrichment behaviour of gallium in heat and surface treatments of Al-Ga foilsASHITAKA, Z; SKELDON, P; THOMPSON, G. E et al.Corrosion science. 2002, Vol 44, Num 12, pp 2725-2735, issn 0010-938XArticle

Suppression of light degradation of carrier lifetimes in low-resistivity Cz-Si solar cellsSAITOH, T; WANG, X; OHTUKA, H et al.Solar energy materials and solar cells. 2001, Vol 65, Num 1-4, pp 277-285, issn 0927-0248Conference Paper

Effect of Ga content on localized corrosion of Al-9 mass%Mg alloys in H2SO4-NaCl solutionTORIYAMA, S; MAE, T; ARAI, K et al.Materials transactions - JIM. 1998, Vol 39, Num 3, pp 404-412, issn 0916-1821Article

A lead-based, low-temperature brazing alloy for brazing and hot metallising copper componentsKHLUDOV, E. A.Welding international. 1996, Vol 10, Num 1, pp 74-75, issn 0950-7116Article

Effect of Ga on stress corrosion cracking characteristics of Al-9 mass%Mg alloysMAE, T; IHARA, M; KOMURA, K et al.Materials transactions - JIM. 1996, Vol 37, Num 12, pp 1781-1788, issn 0916-1821Article

High performance antimony-doped germanium photoconductorsBEEMAN, J. W; HANSEN, W. L; DUBON, O. D et al.Infrared physics & technology. 1996, Vol 37, Num 7, pp 715-721, issn 1350-4495Article

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